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  rb521g-30 diodes rev . a 1/3 schottky barrier diode rb521g-30 z a pplic a t ion z ex te r n a l dime ns ions (unit : mm) z la nd s i ze figur e (unit : mm) rectify i ng small pow er vm d 2 0. 5 1. 2 0. 5 z f eatu r es 1) ultra small mold ty pe. (vmd2) 2) low v f 3) high reliability z cons tr uc tion silicon epit a xial planer z st r u c t u r e r o hm : v m d 2 d o t ( y ea r w e ek f a c t or y) 0. 13 0 . 03 0. 5 0. 05 0. 2 7 0 . 0 3 0. 6 0. 0 5 1. 0 0. 05 1. 4 0 . 0 5 z t a p i n g sp ecificatio n (unit : mm) 0. 76 0. 1 4 0. 1 4 0. 1 2 0. 0 5 1 . 5+0 . 1 0 3. 5 0. 05 1. 7 5 0 . 1 8. 0 0. 3 0. 1 0. 1 8 0 . 0 5 0 . 65 0 . 05 0 . 5 0. 4 2 0. 0 5 0. 3 1. 1 1 0 . 0 5 2. 1 0. 1 z a b so lu te maximu m ratin g s (t a= 25 c) s y m bol u n i t v r v io m a i fs m ma tj tst g pa r a m e t e r r e ve r s e vol t age ( d c ) v e r a g e r e ct i f i e d f o r w ar d cur r e nt - 40 t o +125 li m i t s 30 100 w a r d cur r e nt sur g e pe ak 60hz ? 1cyc 500 i on t e m p e r at ur e t or ag e t e m p e r at ur e 125 a for junct s z electrical ch aracteristics (t a= 25 c) sym bol m i n. typ. m a x . u n i t v f - - 0. 35 v i f =1 0m a i r -- 1 0 a v r = 10v r e ve r s e cur r e nt pa r a m e t e r w a r d vol t age c ondi t i ons for
rb521g-30 diodes rev . a 2/3 z electrical ch aracteristic cu rv es (t a= 25 c) f o rward vo l t agevf(m v ) vf - i f c h arac t e r i st ics forward c u rre n t :i f ( ma) revers e current:i r(u a ) reverse vo lt age v r (v) vr-ir characteris t ics c a pa c i ta n c e b e tw ee n te rmi n als : ct( p f ) reverse vo lt age: vr(v) vr-c t characteris t ics vf d ispersi o n map f o rward vo l t age:vf ( m v) reverse c u rr en t:i r ( u a) ir d is pers i o n m a p capaci t a nce b e tween te rmin als : ct(p f ) ct d i s p e rs i o n map if sm d is res i o n m a p peak s urg e f o rward current:i f s m(a) peak s urg e f o rward current:i f s m ( a) n u m ber o f cy cl es if sm - c yc le c h a r a c t er i s ti c s peak s urg e f o rward current:i f s m ( a) time : t (ms) if sm-t c h a r a ct e r ist i c s ti m e :t ( s ) rth-t c haracteri s tic s tra n si en t th aermal impedance:rth ( /w) fo r w a r d po we r di s s ip a t i o n: p f(w ) averag e r ect i fi ed for w a r d currenti o(a) io -p f c har a c t e r is ti cs reverse power d i s s ip at ion : p r (w ) reverse vo lt age: vr(v) vr-p r characteris t ics 0. 001 0. 01 0. 1 1 10 100 1 000 0 100 200 300 400 500 600 0. 0 1 0.1 1 10 100 1000 10000 01 0 2 0 3 0 1 10 100 0 5 1 0 15 20 f=1mh 250 260 270 280 290 300 ave : 270. 2mv t a =25 i f =10ma n=30 p c s 0 5 10 15 20 25 30 ta = 25 v r =10v n= 30p cs ave : 2 .0 17ua 10 11 12 13 14 15 16 17 18 19 20 ave : 17.34 p f t a =25 f=1mhz vr=0v n=10pcs 0 5 10 1 1 0 100 t if s m 0 5 10 15 20 ave: 3 .9 0a 8.3ms if s m 1cyc 0 5 10 1 1 0 100 8. 3ms if s m 1c y c 8. 3 m s 10 100 1000 0 . 001 0. 1 1 0 100 0 rth( j-a ) rth(j-c) 1m s im =1 0m a i f= 10 0m a 30 0u s tim e m o u n te d on ep ox y bo ar d 0 0. 02 0. 04 0. 06 0. 08 0. 1 00 . 1 0 . 2 0 0. 02 0. 04 0. 06 0. 08 0. 1 01 0 2 0 t a =-25 ta=125 ta = 75 ta = 25 ta=-25 ta=125 ta=25 ta=75 dc d=1/ 2 sin(? 180 ) sin( 180) dc d=1/ 2 3 0
rb521g-30 diodes rev . a 3/3 am bi ent te m p erat ure : t a ( ) d e rating curve?( io -ta) average r ecti fi f o rward c u rre n t :i o( a) averag e rec ti fi ed forward current : i o ( a) cas e temparature:tc( ) d e rating curve?( io -tc) 0 0.1 0.2 0.3 0 2 5 5 0 7 5 100 125 0 0.1 0.2 0.3 0 2 55 07 5 1 0 0 1 2 5 s i n ( ? 180 ) dc d= 1 / 2 t t j =125 d=t/t t vr io vr= 15v 0a 0v t tj=12 5 d=t/t t vr io vr=1 5v 0a 0v sin( 180) dc d=1/2
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.


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